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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FMMBD4448HCDW SURFACE MOUNT SWITCHING DIODE ARRAYS DESCRIPTION Silicon epitaxial planar Switching Diode FEATURES Ultra-Small Surface Mount Package Fast Switching Speed High Conductance APPLICATION For General Purpose Switching Applications, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) WBFBP-06C (2x2x0.5) unit: mm 1 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Non-Repetitive Peak reverse voltage Peak Repetitive peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Pd RJA TJ TSTG 57 500 250 4.0 2.0 150 625 150 80 Limits 100 FMMBD4448HCDW Marking:KA7 MMBD4448HCDW Unit V V RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak forward surge current @=1.0s @=1.0s Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature range V mA mA A mW /W -65 to +150 Electrical Ratings @TA=25 Parameter Reverse Breakdown Voltage Symbol VR VF1 Forward voltage VF2 VF3 VF4 Reverse current Capacitance between terminals Reverse Recovery Time IR1 IR2 CT trr Min. 80 0.62 0.72 0.855 1.0 1.25 0.1 25 3.5 4 Typ. Max. Unit V V V V V A nA pF ns Conditions IR=100A IF=5mA IF=10mA IF=100mA IF=150mA VR=70V VR=20V VR=6V,f=1MHz VR=6V,IF=5mA Typical Characteristics Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 0.420 REF. 0.800 REF. 0.650 TYP. 0.400 REF. 0.350 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.017 REF. 0.032 REF. 0.026 TYP. 0.016 REF. 0.014 REF. 0.020 REF. APPLICATION CIRCUITS Bridge rectifiers |
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